Paper
14 April 2008 Advances in high-brightness semiconductor lasers
M. L. Osowski, W. Hu, R. M. Lammert, S. W. Oh, P. T. Rudy, T. Stakelon, L. Vaissie, J. E. Ungar
Author Affiliations +
Abstract
We present recent advances in high power semiconductor laser bars and arrays at near infrared and eye-safe wavelengths. We report on increased spectral brightness with internal gratings to narrow and stabilize the spectrum and increased spatial brightness in multimode and single mode devices. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. L. Osowski, W. Hu, R. M. Lammert, S. W. Oh, P. T. Rudy, T. Stakelon, L. Vaissie, and J. E. Ungar "Advances in high-brightness semiconductor lasers", Proc. SPIE 6952, Laser Source Technology for Defense and Security IV, 695208 (14 April 2008); https://doi.org/10.1117/12.777065
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CITATIONS
Cited by 14 scholarly publications.
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KEYWORDS
Semiconductor lasers

Fiber couplers

Diodes

High power lasers

Fabry–Perot interferometers

Fiber lasers

Laser applications

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