Effects of TiO2 buffer layers on the dielectric and tunable properties of Ba0.6Sr0.4TiO3 thin films prepared by pulsed laser deposition

Jia Gong; Jinrong Cheng; Shengwen Yu; Wenbiao Wu; Zhongyan Meng

doi:10.1117/12.792628

11 March 2008 Effects of TiO₂ buffer layers on the dielectric and tunable properties of Ba_0.6Sr_0.4TiO₃ thin films prepared by pulsed laser deposition

Jia Gong, Jinrong Cheng, Shengwen Yu, Wenbiao Wu, Zhongyan Meng

Author Affiliations +

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841K (2008) https://doi.org/10.1117/12.792628
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

The dielectric properties of Ba_0.6Sr_0.4TiO₃ (BST) thin films were greatly affected by interfacial layers between the electrodes and BST thin films. Our previous work shows that the dielectric loss of the BST system can be decreased by an excess of Ti contents. In this paper, TiO₂ buffer layers were grown between BST thin films and the Pt coated silicon substrate, which are expected to improve the interfacial conditions by providing a certain amount of titanium. Both BST and TiO₂ films were prepared by pulsed laser deposition. Different substrate temperatures of 550°C, 600°C, 650°C, 700°C and different oxygen pressures of 1mTorr, 10mTorr, and 100mTorr were used for the deposition of TiO₂ buffer layers. XRD pattern shows that all the samples have crystallized into the perovskite structure and the (110) peaks become sharper with increasing substrate temperature, indicating better crystallization along this direction. The increased tunability and lower loss of BST thin films with TiO₂ buffer layers prepared at the optimized temperature and oxygen pressure achieve about 45.9% and 0.01 at the field of 200kV/cm and 1 MHz. The figure of merit of BST thin films is significantly improved to 45.9 upon using TiO₂ buffer layers, which is only about 18.2 for BST thin films prepared directly on the substrates. Our results indicate that TiO₂ buffered BST thin films are expected to have better dielectric and tunable properties.

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Jia Gong, Jinrong Cheng, Shengwen Yu, Wenbiao Wu, and Zhongyan Meng "Effects of TiO₂ buffer layers on the dielectric and tunable properties of Ba_0.6Sr_0.4TiO₃ thin films prepared by pulsed laser deposition", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841K (11 March 2008); https://doi.org/10.1117/12.792628

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KEYWORDS

Titanium dioxide

Thin films

Dielectrics

Oxygen

Crystals

Pulsed laser deposition

Thin film growth

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