Investigations on Sb2O3 doped-SnS thin films prepared by vacuum evaporation

Yuying Guo; Weimin Shi; Yu Zhang; Linjun Wang; Guangpu Wei

doi:10.1117/12.792636

11 March 2008 Investigations on Sb₂O₃ doped-SnS thin films prepared by vacuum evaporation

Yuying Guo, Weimin Shi, Yu Zhang, Linjun Wang, Guangpu Wei

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841Q (2008) https://doi.org/10.1117/12.792636
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

Tin sulfide (SnS) is one of promising candidate materials for low-cost thin film solar cells because of its high absorption coefficient and suitable band-gap. The aim of this paper is to study the properties of doped-SnS thin films prepared by vacuum evaporation. Sb₂O₃ was used as the doping source (the weight ratio of Sb₂O₃ to SnS in the range from 0.1% to 0.8%). And then the Sb₂O₃-doped SnS thin films were annealed in the hydrogen atmosphere at different temperatures and times. The structure of all the samples was characterized by X-ray diffraction (XRD). The electrical properties of SnS thin films were investigated as well. From the results, the optimum doping content of Sb₂O₃ was 0.2% in weight, and the resistivity of the doped-SnS film was 42Ω•cm while that of the pure-SnS film was 99Ω•cm. In addition, the film resistivity of Sb₂O₃-doped SnS film decreased to 24Ω•cm with the best annealing conditions of 400°C and 3 hours.

Citation Download Citation

Yuying Guo, Weimin Shi, Yu Zhang, Linjun Wang, and Guangpu Wei "Investigations on Sb₂O₃ doped-SnS thin films prepared by vacuum evaporation", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841Q (11 March 2008); https://doi.org/10.1117/12.792636

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