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The present investigators have previously reported on strong room-temperature luminescence at 1540 nm from
erbium-doped amorphous silicon oxycarbide (a-SiCxOy:Er) thin films. An enhancement of ~20 times was found for asgrown
SiC0.5O1.0:Er compared to SiO2:Er control samples under continuous wavelength (cw) pumping at 496.5 nm.
Here, we report the effects of post-deposition annealing on the photoluminescence (PL) properties of Er-doped silicon
oxycarbide. The amorphous SiCxOy films were grown by thermal chemical vapor deposition (TCVD) at 800°C and postdeposition annealing was conducted in the temperature range 500-1100°C. The thin films were then implanted with
260keV Er ions and subsequently annealed at 900°C. Strong room-temperature photoluminescence around 1540 nm was
observed, with efficient Er+3 ion excitation occurring for pumping wavelengths ranging from 460 nm to 600 nm.
Modeling of the power dependence of Er luminescence yielded an effective Er excitation cross-section about four orders
of magnitude larger than that for a direct optical excitation of Er+3 ions. Additionally, Fourier transform infrared
spectroscopy (FTIR) studies of post-deposition annealed samples revealed a strong correlation between the Er PL
intensity and the C-O bond concentration in the materials. The work suggests a novel method for achieving efficient Er
luminescence in Si-based materials through controlled engineering of the Si-C-O system.
Spyros Gallis,Vasileios Nikas,Himani Suhag,Mengbing Huang, andAlain E. Kaloyeros
"Strong photoluminescence at 1540 nm from Er-doped amorphous
silicon oxycarbide: a novel silicon material for photonic applications", Proc. SPIE 7030, Nanophotonic Materials V, 703004 (4 September 2008); https://doi.org/10.1117/12.795560
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Spyros Gallis, Vasileios Nikas, Himani Suhag, Mengbing Huang, Alain E. Kaloyeros, "Strong photoluminescence at 1540 nm from Er-doped amorphous silicon oxycarbide: a novel silicon material for photonic applications," Proc. SPIE 7030, Nanophotonic Materials V, 703004 (4 September 2008); https://doi.org/10.1117/12.795560