Trends in Schottky receiver technology for the terahertz region

Byron Alderman; Hoshiar Sanghera; Brian Moyna; Matthew Oldfield; David Matheson

doi:10.1117/12.800258

2 October 2008 Trends in Schottky receiver technology for the terahertz region

Byron Alderman, Hoshiar Sanghera, Brian Moyna, Matthew Oldfield, David Matheson

Proceedings Volume 7117, Millimetre Wave and Terahertz Sensors and Technology; 71170N (2008) https://doi.org/10.1117/12.800258
Event: SPIE Security + Defence, 2008, Cardiff, Wales, United Kingdom

Abstract

Most parts of the electromagnetic spectrum are well understood and exploited, but the terahertz region between the microwave and infrared is still relatively under developed. Potential receiver applications are wide-ranging and cross-disciplinary, spanning the physical, biological, and medical sciences. In this spectral region, Schottky diode technology is uniquely important. InP MMIC amplifiers are generally limited to frequencies less than ~200 GHz, above which their noise performance rapidly deteriorates. Superconducting circuits, which require cooling, may not always be practical. Either as varistor diodes (heterodyne mixing), or varactor diodes (sub-millimetre power generation), Schottky technology underpins terahertz receiver development.

Citation Download Citation

Byron Alderman, Hoshiar Sanghera, Brian Moyna, Matthew Oldfield, and David Matheson "Trends in Schottky receiver technology for the terahertz region", Proc. SPIE 7117, Millimetre Wave and Terahertz Sensors and Technology, 71170N (2 October 2008); https://doi.org/10.1117/12.800258

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