Paper
24 August 2009 A low-noise wide-dynamic-range UV detector with pixel-level A/D conversion
Wenjing Zhang, Xichang Bao, Ling Wang, Chao Li, Yonggang Yuan, Xiangyang Li
Author Affiliations +
Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73810W (2009) https://doi.org/10.1117/12.835686
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
This paper presents a low-power low-noise wide-dynamic-range GaN-based UV detector with pixel-level A/D conversion. The detector comprised an array of 50×50μm2 pixels with a multi-channel bit serial (MCBS) ADC in each pixel. Each pixel contains a UV photo-detector, a 1-bit comparator and a 3-T memory cell. The A/D conversion is performed simultaneously for all pixels. The digital data is read out from the pixel array in manner of a random access digital memory. Since there are many ADCs operating simultaneously, power consumption for each ADC must be minimized. To satisfy the low power consumption, A power-down circuit is introduced in. The minimal value for ADC resolution and the frame rate are 10bits and 100f/s respectively. A high GBW comparator is designed to satisfy this demand. In order to suppress the FPN and 1/f noise a digital correlated double sampling (CDS) is adopted in this application.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wenjing Zhang, Xichang Bao, Ling Wang, Chao Li, Yonggang Yuan, and Xiangyang Li "A low-noise wide-dynamic-range UV detector with pixel-level A/D conversion", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73810W (24 August 2009); https://doi.org/10.1117/12.835686
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KEYWORDS
Ultraviolet detectors

Sensors

Amplifiers

Ultraviolet radiation

Cadmium sulfide

CMOS sensors

Transistors

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