Dumping design of CTIA readout circuit based on a low-dimensional quantum structure photoelectric sensor

F. M. Guo; G. Z. Zhan; J. Q. Han; B. Xu; X. L. Zhou; J. W. Li; D. Y. Xiong; Y. C. Ye; Y. P. Wang; X. H. Wang; J. H. Chu

doi:10.1117/12.835980

5 August 2009 Dumping design of CTIA readout circuit based on a low-dimensional quantum structure photoelectric sensor

F. M. Guo, G. Z. Zhan, J. Q. Han, B. Xu, X. L. Zhou, J. W. Li, D. Y. Xiong, Y. C. Ye, Y. P. Wang, X. H. Wang, J. H. Chu

Proceedings Volume 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications; 73834Z (2009) https://doi.org/10.1117/12.835980
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

A practical equivalent circuit model of the low dimensional photoelectric sensor with quantum dots-quantum well (QDs-QW) hybrid hetero-structure is introduced in this article. This model acts as a signal source for ROIC (readout integrate circuit) simulation. An optimal readout integrated circuit employing capacitor feedback transimpedance amplifier (CTIA) structure is designed for the QDs-QW hybrid hetero-structure photoelectric sensor. Based on the photoelectron storage characteristic of the photoelectric sensor, a dumping structure for CTIA readout integrated circuit is studied. This dumping structure is proposed to release the redundant charge stored by the device for improving the performance of the photoelectric sensor readout.

Citation Download Citation

F. M. Guo, G. Z. Zhan, J. Q. Han, B. Xu, X. L. Zhou, J. W. Li, D. Y. Xiong, Y. C. Ye, Y. P. Wang, X. H. Wang, and J. H. Chu "Dumping design of CTIA readout circuit based on a low-dimensional quantum structure photoelectric sensor", Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 73834Z (5 August 2009); https://doi.org/10.1117/12.835980

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