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Two EDFs with different radiation sensitivities were used in the photo-annealing tests. We compared photo-annealing
efficiencies obtained by using 532 nm and 976 nm lasers. The 532 nm laser with 10 mW showed better efficiency than
976 nm laser with 290 mW in a ~30 cm EDF. The recovery rate was 5.6 seconds of the half-height recovery time. The
532 nm laser possibly excited the defects and provided some thermal energy so that the defects could be recovered. The
annealing efficiency from using the 976 nm laser was close to the one purely from thermal annealing at ~330 °C. For
practical tests, we also built two SPB SFSs and a bidirectional SFS and measured the output power loss dependence on
pump power. Under the dose rate of 129.2 krad/hr, the recovery rate of output power loss was 0.009 dB/min when a 2.8
m EDF#1 co-pumped by both the 532 nm and the 976 nm lasers.
Tz-Shiuan Peng,Yen-Wei Huang,Lon A. Wang,Ren-Young Liu, andFong-In Chou
"Photo-annealing effects for erbium doped fiber sources after gamma irradiation tests by using 532 nm and 976 nm lasers", Proc. SPIE 7503, 20th International Conference on Optical Fibre Sensors, 750375 (5 October 2009); https://doi.org/10.1117/12.835304
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Tz-Shiuan Peng, Yen-Wei Huang, Lon A. Wang, Ren-Young Liu, Fong-In Chou, "Photo-annealing effects for erbium doped fiber sources after gamma irradiation tests by using 532 nm and 976 nm lasers," Proc. SPIE 7503, 20th International Conference on Optical Fibre Sensors, 750375 (5 October 2009); https://doi.org/10.1117/12.835304