Effects of substrate temperature on properties of the aluminum-doped zinc oxide thin films deposited by RF magnetron sputtering

Yanyan Yang; Xiangbin Zeng

doi:10.1117/12.843507

12 October 2009 Effects of substrate temperature on properties of the aluminum-doped zinc oxide thin films deposited by RF magnetron sputtering

Yanyan Yang, Xiangbin Zeng

Author Affiliations +

Proceedings Volume 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies; 751808 (2009) https://doi.org/10.1117/12.843507
Event: Photonics and Optoelectronics Meetings 2009, 2009, Wuhan, China

Abstract

The 3wt% aluminum-doped zinc oxide film (AZO) was sputtered on glass by radio frequency (RF) magnetron sputtering using ceramic target. What's more, sputtering was carried out at different substrate temperatures from 200°C to 350°C with normal deposition. The effect of deposition temperature on structural, optical and electrical properties of the AZO films was studied. It was found that the films become more uniform and compactness as the deposition temperature increased from 200°C to 300°C. Highly oriented AZO films in the (002) direction were observed in specimens deposited at 250°C and 300°C. In addition, It was showed that the average optical transmittance of specimens was about 85%. And there was an increase in electrical conductivity when deposition temperature increased from 200°C to 300°C. The lowest resistivity of 1.05×10^-3Ω•cm was obtained in specimen deposited at 300°C, which makes them available as transparent conductive electrodes in photonics devices including LCD flat panel displays and solar cells.

Citation Download Citation

Yanyan Yang and Xiangbin Zeng "Effects of substrate temperature on properties of the aluminum-doped zinc oxide thin films deposited by RF magnetron sputtering", Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 751808 (12 October 2009); https://doi.org/10.1117/12.843507

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