Transmission electron microscopy and XRD investigations of InAlN/GaN thin heterostructures for HEMT applications

Arantxa Vilalta-Clemente; Magali Morales; Marie P. Chauvat; Yadira Arroyo-Rojas Dasilva; Marie A. Poisson; Michael Heuken; Christoph Giesen; Pierre Ruterana

doi:10.1117/12.841605

12 March 2010 Transmission electron microscopy and XRD investigations of InAlN/GaN thin heterostructures for HEMT applications

Arantxa Vilalta-Clemente, Magali Morales, Marie P. Chauvat, Yadira Arroyo-Rojas Dasilva, Marie A. Poisson, Michael Heuken, Christoph Giesen, Pierre Ruterana

Author Affiliations +

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76020K (2010) https://doi.org/10.1117/12.841605
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

InAlN/GaN layers grown by metalorganic vapor phase epitaxy have been investigated by transmission electron microscopy (TEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). It is shown that the surface morphology and the crystallinity of the InAlN layers critically depend on the In composition. AFM analysis points out that step flow growth may not be easily attained in this system: when the InAlN or AlN interlayer thickness is increased, the growth mode becomes three dimensional. However, the formed islands are hundred of nanometers apart, and were not observed in the transmission electron microscope. From the TEM investigation, it is pointed out that v-shaped defects are present at the surface of some layers and they may be as deep as the whole ternary alloy, they are connected to threading dislocations originated from the underlying template layers. As expected the measured residual strain is minimum when the ternary layer composition is close to 16-17% In.

Citation Download Citation

Arantxa Vilalta-Clemente, Magali Morales, Marie P. Chauvat, Yadira Arroyo-Rojas Dasilva, Marie A. Poisson, Michael Heuken, Christoph Giesen, and Pierre Ruterana "Transmission electron microscopy and XRD investigations of InAlN/GaN thin heterostructures for HEMT applications", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020K (12 March 2010); https://doi.org/10.1117/12.841605

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