Paper
11 October 2010 Research on third-order susceptibility tensor of silicon at telecom wavelength
Yu-Hong Zhang, Hang Liu, Zhan-Guo Chen, Gang Jia, Ce Ren
Author Affiliations +
Abstract
In this paper, the electro-induced birefringence based on Kerr effect and Franz-Keldysh effect in bulk silicon crystal at 1.3μm wavelengths has been measured. By using Kerr effect, the third-order susceptibility tensor of bulk crystalline silicon has been calculated.The two independent tensor of silicon X (3) susceptibility can be obtained by calculation (3) 6.22 (1 2.2%) 10 -20 m2 V2 and Xxyxy(3) = and xxxx(3) 9.13 (1 ±2.2%) 10-20 m2 V 2 = m2/V2. The research can drive the silicon utility in the photo-electricity field.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu-Hong Zhang, Hang Liu, Zhan-Guo Chen, Gang Jia, and Ce Ren "Research on third-order susceptibility tensor of silicon at telecom wavelength", Proc. SPIE 7656, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 765673 (11 October 2010); https://doi.org/10.1117/12.865458
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Silicon

Crystals

Kerr effect

Refractive index

Birefringence

Dielectric polarization

Dielectrics

Back to Top