Silicon carbide NEMS logic for high-temperature applications

Mehran Mehregany; Te-Hao Lee

doi:10.1117/12.849826

5 May 2010 Silicon carbide NEMS logic for high-temperature applications

Mehran Mehregany, Te-Hao Lee

Proceedings Volume 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II; 76791J (2010) https://doi.org/10.1117/12.849826
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

This paper reports cantilever-type nano-electro-mechanical systems (NEMS) silicon carbide (SiC) switches capable of operation from 25°C to 600°C, with threshold voltages ≤5 V. The fabricated SiC switches are actuated electrostatically, wherein the suspended cantilever electrode is pulled down to contact the bottom stationary electrode. The switches, fabricated using surface micromachining, have electrode separation gaps determined by the ~75 nm-thick sacrificial SiO₂. Two-terminal switches have been cycled more than 40 billion times at room temperature until failure and more than 2 million times at 600°C when the package wire bonds fail. The room temperature failure mechanisms of these switches are mechanical fracture and stiction. Stiction of the switch electrodes is strongly correlated to the roughness of their contacting surfaces. Measurements indicate that 60% of switches with 8 nm electrode surface roughness could be operated over billions cycles before fracture. In contrast, 85% of the switches with 1 nm roughness were stuck after fabrication release.

Citation Download Citation

Mehran Mehregany and Te-Hao Lee "Silicon carbide NEMS logic for high-temperature applications", Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76791J (5 May 2010); https://doi.org/10.1117/12.849826

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