Distributed Feedback GaAs/GaAlAs Diode Lasers

D. R. Scifres; R. D. Burnham; W. Streifer

doi:10.1117/12.975711

23 July 1976 Distributed Feedback GaAs/GaAlAs Diode Lasers

D. R. Scifres, R. D. Burnham, W. Streifer

Proceedings Volume 0077, Fibers and Integrated Optics; (1976) https://doi.org/10.1117/12.975711
Event: 1976 SPIE/SPSE Technical Symposium East, 1976, Reston, United States

Abstract

Within the last few years GaAs/GaAlAs heterostructure laser diodes have been developed which are capable of continuous operation at 300°K and above for prolonged periods of time.(1-5) These lasers are suitable for a variety of uses including fiber optic communication, optical scanning, and writing of high density optical memories. However, in order to take full advantage of the small size and increase the utility of the devices in complex systems, it is desirable to be able to integrate these lasers into a monolithic optical circuit. The distributed feedback, a (DFB) laser presents just such an opportunity.

Citation Download Citation

D. R. Scifres, R. D. Burnham, and W. Streifer "Distributed Feedback GaAs/GaAlAs Diode Lasers", Proc. SPIE 0077, Fibers and Integrated Optics, (23 July 1976); https://doi.org/10.1117/12.975711

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available