Paper
18 August 2010 Thermal transient characteristics of flip chip high power light emitting diodes
Chien-Ping Wang, Tzung-Te Chen, Shih-Chun Yang, Han-Kuei Fu, An-Tse Lee, Pei-Ting Chou, Chien-Jen Sun, Chiu-Ling Chen, Mu-Tao Chu
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Abstract
The die-attached quality and the thermal transient characteristics of high power flip chip light emitting diodes (LEDs) are investigated using thermal transient tester. Various die-attached materials were utilized to compare the difference in their thermal resistances and long term performance. By applying accelerated aging stress, the deterioration rates at the die-attached layers were obtained. Numerical simulation provided further understanding of LED device temperature distribution and also revealed that the thermal variance at the die-attached interface can be recognized within only few milliseconds for the flip chip structure. The effects of bump arrangement and material were analyzed to achieve high temperature uniformity and low thermal resistance for high power LEDs.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chien-Ping Wang, Tzung-Te Chen, Shih-Chun Yang, Han-Kuei Fu, An-Tse Lee, Pei-Ting Chou, Chien-Jen Sun, Chiu-Ling Chen, and Mu-Tao Chu "Thermal transient characteristics of flip chip high power light emitting diodes", Proc. SPIE 7784, Tenth International Conference on Solid State Lighting, 77840T (18 August 2010); https://doi.org/10.1117/12.861083
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KEYWORDS
Light emitting diodes

Resistance

Interfaces

Numerical simulations

Aluminum

Gold

Epoxies

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