Growth of crack-free semi-polar (1-101) GaN on a 7°-off (001) Si substrate by metal-organic chemical vapor deposition

Hsien-Yu Lin; Hsueh-Hsing Liu; Chen-Zi Liao; Jen-Inn Chyi

doi:10.1117/12.876356

3 March 2011 Growth of crack-free semi-polar (1-101) GaN on a 7°-off (001) Si substrate by metal-organic chemical vapor deposition

Hsien-Yu Lin, Hsueh-Hsing Liu, Chen-Zi Liao, Jen-Inn Chyi

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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79392H (2011) https://doi.org/10.1117/12.876356
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

This paper reports a novel selective growth method for growing crack-free semi-polar (1-101) GaN on 7°-off (001) Si substrates by adding SiO₂ stripes in perpendicular to the V-grooves on Si. This method can effectively reduce the thermal stress between GaN and Si substrate so that crack-free (1-101) GaN films as thick as 1 μm is achieved after coalescence even without an AlN interlayer. Cathodoluminescence measurements show the presence of low dislocation density areas, which can be attributed to the bending of dislocations toward to the [1-100] and [11-20] directions during the facet growth.

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Hsien-Yu Lin, Hsueh-Hsing Liu, Chen-Zi Liao, and Jen-Inn Chyi "Growth of crack-free semi-polar (1-101) GaN on a 7°-off (001) Si substrate by metal-organic chemical vapor deposition", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79392H (3 March 2011); https://doi.org/10.1117/12.876356

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