Photoluminescence and hall study for the production and recovery of defects in phosphorus implanted ZnO films

S. Nagar; B. Sinha; A. Mandal; S. Chakrabarti; S. K. Gupta

doi:10.1117/12.874006

14 March 2011 Photoluminescence and hall study for the production and recovery of defects in phosphorus implanted ZnO films

S. Nagar, B. Sinha, A. Mandal, S. Chakrabarti, S. K. Gupta

Author Affiliations +

Proceedings Volume 7940, Oxide-based Materials and Devices II; 794006 (2011) https://doi.org/10.1117/12.874006
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

ZnO (002) films of thickness 0.5 μm were grown on c-plane sapphire substrates by Pulsed Laser Deposition technique at 400°C in oxygen ambient of 75 mTorr and implanted with 8x10¹⁴ cm^-2 dose of phosphorus ions of energy 50 keV (Sample A) followed by Rapid Thermal Annealing in Ar (Sample B) and oxygen atmospheres (Sample C) at 750°C (30 seconds). AFM images depicted root-mean-square roughness for Sample A (10.072 nm), B (9.314 nm) and C (4.9 nm). Room-temperature Hall study revealed n-type conductivity with carrier concentrations of 9.69x10¹⁹cm^-3, 1.36x10²⁰ cm^-3, 4x10¹⁸ cm^-3 and Hall mobility of 0.727 cm²/V-s, 12.44 cm²/V-s, 54.3 cm²/V-s for Sample A, B and C respectively. Possible reasons might be the formation of vacancy clusters by implantation for Sample A, production of oxygen vacancies with agglomeration of vacancy clusters and without further aggregation of vacancy clusters with higher annealing temperature for Sample B and C respectively. Dominance of donor-bound exciton peaks were found to be at 3.295 eV, 3.284 eV, 3.281 eV and 3.272 eV for unimplanted sample, Sample A, B and C respectively from roomtemperature photoluminescence study.

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S. Nagar, B. Sinha, A. Mandal, S. Chakrabarti, and S. K. Gupta "Photoluminescence and hall study for the production and recovery of defects in phosphorus implanted ZnO films", Proc. SPIE 7940, Oxide-based Materials and Devices II, 794006 (14 March 2011); https://doi.org/10.1117/12.874006

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