Dislocation Reduction Via Annealing Of GaAs Grown On Si Substrates

R. Houdre; G. Munns; H. Morkoc; C. Choi; N. Otsuka; S. L. Zhang; D. Levi; M. V. Klein

doi:10.1117/12.940992

20 April 1987 Dislocation Reduction Via Annealing Of GaAs Grown On Si Substrates

R. Houdre, G. Munns, H. Morkoc, C. Choi, N. Otsuka, S. L. Zhang, D. Levi, M. V. Klein

Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.940992
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Gallium arsenide layers grown by molecular beam epitaxy on (100) Si substrates, subjected to various types of annealing, exhibit a substantial reduction in dislocation density near the interface and in the bulk of the epitaxial layer. Different kinds of annealing are examined, ex-situ annealing which is done in a furnace after the growth and in-situ annealing which is done during the growth.

Citation Download Citation

R. Houdre, G. Munns, H. Morkoc, C. Choi, N. Otsuka, S. L. Zhang, D. Levi, and M. V. Klein "Dislocation Reduction Via Annealing Of GaAs Grown On Si Substrates", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.940992

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