Research on the h-BN films for high frequency SAW devices

Lian-jie Sun; Xi-ming Chen

doi:10.1117/12.905402

28 November 2011 Research on the h-BN films for high frequency SAW devices

Lian-jie Sun, Xi-ming Chen

Proceedings Volume 8202, 2011 International Conference on Optical Instruments and Technology: Solid State Lighting and Display Technologies, Holography, Speckle Pattern Interferometry, and Micro/Nano Manufacturing and Metrology; 82020L (2011) https://doi.org/10.1117/12.905402
Event: International Conference on Optical Instruments and Technology (OIT2011), 2011, Beijing, Beijing, China

Abstract

Hexagonal Boron Nitride (h-BN) films For high-frequency SAW devices were deposited on Ti/Al/Si(111) wafers by RF magnetron sputtering. The structure of h-BN films was investigated by fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) spectra. And the surface morphology and piezoelectric properties of h-BN film was characterized by atomic force microscopy (AFM). And the characterization results show that when the RF power is 300w and other experimental parameters were fixed, h-BN films was in high purity and the c-axis oriented, h-BN films was in high purity and the c-axis oriented, and the particles of which are uniform and compact, roughness is 2.63nm with piezoelectric and piezoelectric response even, meet the requirements of high sound propagation speed and excellent piezoelectric for high frequency SAW devices. The studies of piezoelectric test of thin films have shown that PFM test method of atomic force microscopy was suitable for characterization of piezoelectric and properties of the piezoelectric response distribution of nano-structure semiconductor thin film.

Citation Download Citation

Lian-jie Sun and Xi-ming Chen "Research on the h-BN films for high frequency SAW devices", Proc. SPIE 8202, 2011 International Conference on Optical Instruments and Technology: Solid State Lighting and Display Technologies, Holography, Speckle Pattern Interferometry, and Micro/Nano Manufacturing and Metrology, 82020L (28 November 2011); https://doi.org/10.1117/12.905402

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available