Paper
1 March 2012 III-nitride intersubband photonics
Salam Sakr, Maria Tchernycheva, Juliette Mangeney, Elias Warde, Nathalie Isac, Lorenzo Rigutti, Raffaele Colombelli, Anatole Lupu, Laurent Vivien, François H. Julien, Alon Vardi, Schmuel E. Schacham, Gad Bahir, Yulia Kotsar, Eva Monroy, Etienne Giraud, Denis Martin, Nicolas Grandjean
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Abstract
This paper reviews the recent progress towards III-nitride intersubband devices based on quantum wells. We first present recent achievements in terms of GaN-based quantum cascade detectors operating at near-infrared wavelengths. We show that these devices are intrinsically extremely fast based on femtosecond time-resolved measurements of the photocurrent. The design of III-nitride quantum cascade detectors, which relies on the engineering of the internal electric field, is flexible enough to allow for two-color detection. We finally discuss the potential of III-nitride intersubband devices in the THz frequency domain and present the recent observation of THz absorption using low aluminium content AlGaN/GaN step quantum wells.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Salam Sakr, Maria Tchernycheva, Juliette Mangeney, Elias Warde, Nathalie Isac, Lorenzo Rigutti, Raffaele Colombelli, Anatole Lupu, Laurent Vivien, François H. Julien, Alon Vardi, Schmuel E. Schacham, Gad Bahir, Yulia Kotsar, Eva Monroy, Etienne Giraud, Denis Martin, and Nicolas Grandjean "III-nitride intersubband photonics", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621Q (1 March 2012); https://doi.org/10.1117/12.900002
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KEYWORDS
Quantum wells

Absorption

Terahertz radiation

Gallium nitride

Sensors

Quantum cascade lasers

Quantum chromodynamics

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