Diffraction-based overlay measurement on dedicated mark using rigorous modeling method

Hailiang Lu; Fan Wang; Qingyun Zhang; Yonghui Chen; Chang Zhou

doi:10.1117/12.916365

5 April 2012 Diffraction-based overlay measurement on dedicated mark using rigorous modeling method

Hailiang Lu, Fan Wang, Qingyun Zhang, Yonghui Chen, Chang Zhou

Proceedings Volume 8324, Metrology, Inspection, and Process Control for Microlithography XXVI; 832422 (2012) https://doi.org/10.1117/12.916365
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Diffraction Based Overlay (DBO) is widely evaluated by numerous authors, results show DBO can provide better performance than Imaging Based Overlay (IBO). However, DBO has its own problems. As well known, Modeling based DBO (mDBO) faces challenges of low measurement sensitivity and crosstalk between various structure parameters, which may result in poor accuracy and precision. Meanwhile, main obstacle encountered by empirical DBO (eDBO) is that a few pads must be employed to gain sufficient information on overlay-induced diffraction signature variations, which consumes more wafer space and costs more measuring time. Also, eDBO may suffer from mark profile asymmetry caused by processes. In this paper, we propose an alternative DBO technology that employs a dedicated overlay mark and takes a rigorous modeling approach. This technology needs only two or three pads for each direction, which is economic and time saving. While overlay measurement error induced by mark profile asymmetry being reduced, this technology is expected to be as accurate and precise as scatterometry technologies.

Citation Download Citation

Hailiang Lu, Fan Wang, Qingyun Zhang, Yonghui Chen, and Chang Zhou "Diffraction-based overlay measurement on dedicated mark using rigorous modeling method", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 832422 (5 April 2012); https://doi.org/10.1117/12.916365

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