The effects of plasma exposure on low-k dielectric materials

J. L. Shohet; H. Ren; M. T. Nichols; H. Sinha; W. Lu; K. Mavrakakis; Q. Lin; N. M. Russell; M. Tomoyasu; G. A. Antonelli; S. U. Engelmann; N. C. Fuller; V. Ryan; Y. Nishi

doi:10.1117/12.917967

16 March 2012 The effects of plasma exposure on low-k dielectric materials

J. L. Shohet, H. Ren, M. T. Nichols, H. Sinha, W. Lu, K. Mavrakakis, Q. Lin, N. M. Russell, M. Tomoyasu, G. A. Antonelli, S. U. Engelmann, N. C. Fuller, V. Ryan, Y. Nishi

Author Affiliations +

Proceedings Volume 8328, Advanced Etch Technology for Nanopatterning; 83280I (2012) https://doi.org/10.1117/12.917967
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Plasma-induced damage to low-k dielectric materials can be quantified by separation of the effects of charged-particle bombardment, photon bombardment, and gas-radical flux. For ion and photon bombardment, the spatial location and extent of the damage can be determined. Damage effects from radical flux will be shown to be small. Both SiCOH and photo-programmable low-k (PPLK) dielectrics will be discussed.

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J. L. Shohet, H. Ren, M. T. Nichols, H. Sinha, W. Lu, K. Mavrakakis, Q. Lin, N. M. Russell, M. Tomoyasu, G. A. Antonelli, S. U. Engelmann, N. C. Fuller, V. Ryan, and Y. Nishi "The effects of plasma exposure on low-k dielectric materials", Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280I (16 March 2012); https://doi.org/10.1117/12.917967

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