Preparation And Characterization Of RF Sputtered A-Si:H Films For Optoelectronic Device Applications.

J. J. Sluss Jr.; T. E. Batchman

doi:10.1117/12.967522

1 January 1987 Preparation And Characterization Of RF Sputtered A-Si:H Films For Optoelectronic Device Applications.

J. J. Sluss Jr., T. E. Batchman

Author Affiliations +

Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967522
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

The preparation of hydrogenated amorphous silicon. (a-Si:H) thin films by RF sputtering has been investi-gated. Subsequent characterization of the properties of these films indicates that this manner of deposition is suitable for use in the fabrication of thin-film waveguide photodetectors.

Citation Download Citation

J. J. Sluss Jr. and T. E. Batchman "Preparation And Characterization Of RF Sputtered A-Si:H Films For Optoelectronic Device Applications.", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); https://doi.org/10.1117/12.967522

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE