Silicon-on-insulator electro-optically tunable microring resonators with gear-shaped p-i-n diodes

Wei Hong; Chuanxiang Sheng; Qian Chen

doi:10.1117/12.970538

15 October 2012 Silicon-on-insulator electro-optically tunable microring resonators with gear-shaped p-i-n diodes

Wei Hong, Chuanxiang Sheng, Qian Chen

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 841911 (2012) https://doi.org/10.1117/12.970538
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

In this paper, a novel electron node for microring is analyzed based on plasma dispersion modulation effect. The gearshaped double-sector electron node is designed for microring embedded with resonator disks (MERD). Silvaco, twodimensional (2-D) semiconductor device simulator, has been used to analyze the relationship between concentration changes of free hole (electron) and output voltage. The optical investigation was carried out by CMT tools, giving rise to a complete evaluation of the electro-optically properties for our device. We simulate three positions of the MERD cross section with two dopant concentrations. The results show that spacing between electron nodes has important impact to resonator frequency shift. Fixing the concentrations of P and N at 1e20/cm³, the resonator frequency shift can be reached to 0.09nm when the spacing between electron nodes is 2 µm.

Citation Download Citation

Wei Hong, Chuanxiang Sheng, and Qian Chen "Silicon-on-insulator electro-optically tunable microring resonators with gear-shaped p-i-n diodes", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 841911 (15 October 2012); https://doi.org/10.1117/12.970538

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