Theoretical study about the gain in indirect bandgap semiconductor acousto-optical cavities with simultaneous photon and phonon confinement

José M. Escalante Fernandez; Alejandro Martínez

doi:10.1117/12.921080

10 May 2012 Theoretical study about the gain in indirect bandgap semiconductor acousto-optical cavities with simultaneous photon and phonon confinement

José M. Escalante Fernandez, Alejandro Martínez

Author Affiliations +

Proceedings Volume 8432, Semiconductor Lasers and Laser Dynamics V; 84321M (2012) https://doi.org/10.1117/12.921080
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

We study the gain in an acousto-optical cavity made of an indirect bandgap semiconductor with simultaneous confinement of photons and photons. We obtain that the phonon confinement in such a cavity can give rise to optical gain at room temperature.

Citation Download Citation

José M. Escalante Fernandez and Alejandro Martínez "Theoretical study about the gain in indirect bandgap semiconductor acousto-optical cavities with simultaneous photon and phonon confinement", Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84321M (10 May 2012); https://doi.org/10.1117/12.921080

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