Analysis of Angelov Model for 0.25um pHEMTs

Deepti Mongia; Meena Mishra; Ashok Kumar; V. R. Balakrishnan; Harishankar Sharma; B. K. Sehgal

doi:10.1117/12.926856

15 October 2012 Analysis of Angelov model for 0.25μm pHEMTs

Deepti Mongia, Meena Mishra, Ashok Kumar, V. R. Balakrishnan, Harishankar Sharma, B. K. Sehgal

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490N (2012) https://doi.org/10.1117/12.926856
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

This paper explains the extraction of parameters of Angelov’s model for 0.25μm GaAs pHEMT (2x100μm) devices using extensive measurements without using any expensive extraction software. For DC parameters, we analyzed the equations associated with the parameters and established an effective extraction procedure. The small signal parameter extraction was also carried out extensively at various bias points and the bias dependency has been added for certain non-linear elements in the complete model. The model accuracy has been confirmed by I-V matching, S-parameter matching and single tone harmonic levels matching between the measured data and the modeled characteristics. The average percentage accuracy between modeled and measured data has been found out to be around 94-95% for Sparameter matching at different bias points and around 88-89% for I-V matching.

Citation Download Citation

Deepti Mongia, Meena Mishra, Ashok Kumar, V. R. Balakrishnan, Harishankar Sharma, and B. K. Sehgal "Analysis of Angelov model for 0.25μm pHEMTs", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490N (15 October 2012); https://doi.org/10.1117/12.926856

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