Paper
16 May 1988 High-Speed Multiquantum Well Avalanche Photodiodes
Y. Zebda, J. Hinckley, P. Bhattacharya, J. Singh, F-Y. Juang
Author Affiliations +
Proceedings Volume 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics; (1988) https://doi.org/10.1117/12.943419
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
Synthetically modulated structures offer the capability of tunability of bandgap and other material parameters. In particular, the GaAs/AlGaAs and Ino.53Ga0.47As/ Ino.52A10.48As systems offer these advantages in the infrared and optical communication wavelength ranges. We report here the properties of superlattices and the properties of avalanche and p-i-n photodiodes made with thes materials. The multiquantum well struc-tures (MQW) have LZ and LB varying from 25-500Å. Impact ionization phenomena in the different structures have also been determined from carrier multiplication and noise measurements and have been analyzed by Monte Carlo techniques. Techniques for obtaining enhanced optical absorption in very high-speed photodiodes are demonstrated.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Zebda, J. Hinckley, P. Bhattacharya, J. Singh, and F-Y. Juang "High-Speed Multiquantum Well Avalanche Photodiodes", Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); https://doi.org/10.1117/12.943419
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KEYWORDS
Photodiodes

Superlattices

Quantum wells

Absorption

Ionization

Diodes

Gallium arsenide

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