Electrical conductivity of the LiNbO3 heterostructures grown by ion sputtering method

V. Ievlev; M. Sumets; A. Kostuchenko

doi:10.1117/12.2011201

15 March 2013 Electrical conductivity of the LiNbO₃ heterostructures grown by ion sputtering method

V. Ievlev, M. Sumets, A. Kostuchenko

Proceedings Volume 8770, 17th International School on Quantum Electronics: Laser Physics and Applications; 87701M (2013) https://doi.org/10.1117/12.2011201
Event: Seventeenth International School on Quantum Electronics: Laser Physics and Applications, 2012, Nessebar, Bulgaria

Abstract

The polycrystalline LiNbO₃ films were grown by the ion-beam sputtering method on (001)Si substrates. Dielectric losses of the grown (001)Si-LiNbO₃ arises from conductivity of LiNbO³ films and increases when temperature rises. Ac conductivity of the studied heterostructures is described by the correlated-barrier hopping (CBH) model and it is induced by the jumps of charge carries between charge centers with concentration D = 3,5·10₂₂ m_-3.

Citation Download Citation

V. Ievlev, M. Sumets, and A. Kostuchenko "Electrical conductivity of the LiNbO₃ heterostructures grown by ion sputtering method", Proc. SPIE 8770, 17th International School on Quantum Electronics: Laser Physics and Applications, 87701M (15 March 2013); https://doi.org/10.1117/12.2011201

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