Optical emission spectroscopy analysis for Ge2Sb2Te5 etching endpoint detection in HBr/He plasma

Juntao Li; Bo Liu; Zhitang Song; Gaoming Feng; Guanping Wu; Aodong He; Zuoya Yang; Nanfei Zhu; Jia Xu; Jiadong Ren; Songlin Feng

doi:10.1117/12.2018658

24 January 2013 Optical emission spectroscopy analysis for Ge₂Sb₂Te₅ etching endpoint detection in HBr/He plasma

Juntao Li, Bo Liu, Zhitang Song, Gaoming Feng, Guanping Wu, Aodong He, Zuoya Yang, Nanfei Zhu, Jia Xu, Jiadong Ren, Songlin Feng

Author Affiliations +

Proceedings Volume 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage; 87820L (2013) https://doi.org/10.1117/12.2018658
Event: 2012 International Workshop on Information Data Storage and Ninth International Symposium on Optical Storage, 2012, Shanghai, China

Abstract

In the fabrication of phase change memory devices, HBr/He gas is employed in patterning Ge₂Sb₂Te₅ (GST) because it is damage free to GST sidewall. Accurate and reproducible endpoint detection methods are necessary in this etching process. In-situ optical emission spectroscopy (OES) is collected and analyzed to control the GST etching process due to its non-invasiveness. By analyzing the light emitted from plasma, we report an effective etch endpoint detection method for GST etching process is developed and the results are also confirmed using scanning electron micrographs.

Citation Download Citation

Juntao Li, Bo Liu, Zhitang Song, Gaoming Feng, Guanping Wu, Aodong He, Zuoya Yang, Nanfei Zhu, Jia Xu, Jiadong Ren, and Songlin Feng "Optical emission spectroscopy analysis for Ge₂Sb₂Te₅ etching endpoint detection in HBr/He plasma", Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820L (24 January 2013); https://doi.org/10.1117/12.2018658

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