Paper
26 September 2013 Effects of quantum efficiency on PbSe/PbSrSe multiple quantum well structures
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Abstract
The effects of quantum efficiency on PbSe/Pb0.934Sr0.066 Se multiple Quantum well Structure were analyzed. We calculate and identify the critical design parameters required to optimize and study the MQW system as a function of five temperatures assuming the quantum efficiency is not equal to one and hence we include the effects of nonradiative recombination due to Auger recombination and carrier leakage over the barrier into the confinement layers. Inclusion of quantum efficiency in addition to temperature dependence increased the threshold current values by almost 10 times. Also, it was noticed that the threshold current density values dropped fast at small cavities and remained constant after some critical cavity length around 100 μm. When experimental quantum efficiency values were used, the threshold current values were higher than those found using the theoretical quantum efficiency values due to leakage current over the barrier.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Khodr "Effects of quantum efficiency on PbSe/PbSrSe multiple quantum well structures", Proc. SPIE 8816, Nanoengineering: Fabrication, Properties, Optics, and Devices X, 88160P (26 September 2013); https://doi.org/10.1117/12.2022336
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KEYWORDS
Quantum efficiency

Quantum wells

Selenium

Tunable lasers

Lead

Nanostructures

Radium

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