Field effect transistor as detector of THz radiation helicity

K. S. Romanov; N. Dyakonova; D. B. But; F. Teppe; W. Knap; M. I. Dyakonov; C. Drexler; P. Olbrich; J. Karch; M. Schafberger; S. Ganichev; Yu. Mityagin; O. Klimenko

doi:10.1117/12.2022264

24 September 2013 Field effect transistor as detector of THz radiation helicity

K. S. Romanov, N. Dyakonova, D. B. But, F. Teppe, W. Knap, M. I. Dyakonov, C. Drexler, P. Olbrich, J. Karch, M. Schafberger, S. Ganichev, Yu. Mityagin, O. Klimenko

Author Affiliations +

Proceedings Volume 8846, Terahertz Emitters, Receivers, and Applications IV; 88460N (2013) https://doi.org/10.1117/12.2022264
Event: SPIE Optical Engineering + Applications, 2013, San Diego, California, United States

Abstract

We use two antenna model to develop a theory of the recently observed helicity-sensitive detection of terahertz radiation by FETs. The effect is due to the mixing of the ac signals produced in the channel by the two antennas. We obtain the helicity-dependent part of the photoresponse and its dependence on the antenna impedance, gate length, and gate voltage.

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K. S. Romanov, N. Dyakonova, D. B. But, F. Teppe, W. Knap, M. I. Dyakonov, C. Drexler, P. Olbrich, J. Karch, M. Schafberger, S. Ganichev, Yu. Mityagin, and O. Klimenko "Field effect transistor as detector of THz radiation helicity", Proc. SPIE 8846, Terahertz Emitters, Receivers, and Applications IV, 88460N (24 September 2013); https://doi.org/10.1117/12.2022264

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