Paper
19 September 2013 High-operating-temperature MWIR detectors using type II superlattices
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Abstract
There is an increasing interest in the development of high operating temperature (HOT) detectors with InAs/Ga(In)Sb Type-II superlattice (T2-SL) material systems. A wide variety of unipolar barrier structures have been investigated and successfully implemented in low-noise device architectures. In this paper, some of our recent work on the development of HOT mid-IR (MWIR) T2-SL photodetectors with interband cascade schemes will be summarized. In these structures, the discrete InAs/GaSb SL absorbers are sandwiched between quantum-engineered electron and hole barriers, which facilitate photovoltaic operation and efficient photo-carrier extraction. Even at its initial stage of development, such an advanced design has led to the demonstration of mid-IR photodetectors with background-limited operation above 150 K (300 K, 2π field-of-view), as well as above room temperature zero-bias operation. Further understanding of the device operation and design principles will also be discussed.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z.-B. Tian, T. Schuler-Sandy, S. E. Godoy, H. S. Kim, and S. Krishna "High-operating-temperature MWIR detectors using type II superlattices", Proc. SPIE 8867, Infrared Remote Sensing and Instrumentation XXI, 88670S (19 September 2013); https://doi.org/10.1117/12.2024587
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KEYWORDS
Photodetectors

Mid-IR

Superlattices

Sensors

Stereolithography

Temperature metrology

Infrared radiation

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