Paper
9 September 2013 Analysis of EUV mask durability under various absorber etch conditions
Author Affiliations +
Abstract
During EUV exposure, more frequent mask cleaning is essential for removing not only particles from lack of pellicle but also the carbon contamination due to accumulative EUV exposure. Because of this reason, process improvement for minimize corrosion and etching of the Ru capping layer is urgently needed. In this work, the influence of TaBN absorber etch condition on Ru integrity followed by repetitive cleaning was evaluated and the effects on long-term durability of Ru are compared under various cleaning conditions. Consequently, it was shown that Ru durability was strongly influenced by the gas contents and over etch time of absorber dry etch, not only as a function of cleaning conditions.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dong Wook Lee, Sang Jin Jo, Sung Hyun Oh, Tae Joong Ha, Sang Pyo Kim, and Dong Gyu Yim "Analysis of EUV mask durability under various absorber etch conditions", Proc. SPIE 8880, Photomask Technology 2013, 88801Y (9 September 2013); https://doi.org/10.1117/12.2026206
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Cited by 1 scholarly publication.
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KEYWORDS
Etching

Ruthenium

Photomasks

Reflectivity

Extreme ultraviolet

Multilayers

Semiconducting wafers

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