Wet etching of AlGaN/GaN photocathode grown by MOCVD

Guanghui Hao; Benkang Chang; Hongchang Cheng

doi:10.1117/12.2034325

16 August 2013 Wet etching of AlGaN/GaN photocathode grown by MOCVD

Guanghui Hao, Benkang Chang, Hongchang Cheng

Proceedings Volume 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications; 891214 (2013) https://doi.org/10.1117/12.2034325
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

The AlGaN/GaN with thin GaN surface was grown by metalorganic chemical vapor deposition (MOCVD). And one of two AlGaN/GaN photocathode samples was etched by molten KOH about 40s, and its reflectivity and transmittance are tested. The thickness of AlGaN and GaN layers are fitted by the matrix formula for thin film optics, and the GaN thickness of them are 7nm and 2.5nm respectively. And etch speed of GaN are got in molten KOH at about 400°C. Then the etched and original AlGaN/GaN photocathode samples are activated by Cs/O in the same way. The spectral response and the result of simulation show that the cut-off wavelength of the etched AlGaN/GaN deviate to the short-wave. And the quantum efficiency decline with the GaN thickness decrease.

Citation Download Citation

Guanghui Hao, Benkang Chang, and Hongchang Cheng "Wet etching of AlGaN/GaN photocathode grown by MOCVD", Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 891214 (16 August 2013); https://doi.org/10.1117/12.2034325

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