Paper
9 May 2014 Wavelength control in fabrication of wafer fused VCSELs emitting in the 1310 nm waveband
A. Sirbu, V. Iakovlev, A. Mereuta, A. Caliman, G. Suruceanu, Z. Mickovic, Eli Kapon
Author Affiliations +
Abstract
Emission wavelength setting of 1310nm-waveband VCSELs designed for coarse wavelength division multiplexing (CWDM) 4x10 Gbps fiber-optics transmission can be controlled thanks to the wafer fusion fabrication approach. This approach allows performing the cavity adjustment before bonding the distributed Bragg reflectors (DBRs) to the active cavity of the device. Cavity adjustment was performed by digital etching with nanometer precision and proves to be very effective in compensating for epitaxial growth thickness off-set relative to nominal design and thickness nonuniformity across the wafer. With this fabrication approach we reach on fused VCSEL wafers more than 90% yield of devices that fit the CWDM wavelength slots.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Sirbu, V. Iakovlev, A. Mereuta, A. Caliman, G. Suruceanu, Z. Mickovic, and Eli Kapon "Wavelength control in fabrication of wafer fused VCSELs emitting in the 1310 nm waveband", Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 91340B (9 May 2014); https://doi.org/10.1117/12.2052557
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Semiconducting wafers

Vertical cavity surface emitting lasers

Coarse wavelength division multiplexing

Temperature metrology

Distributed Bragg reflectors

Control systems

Etching

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