A high efficiency machining method of SiC: ion-enhanced atmospheric pressure plasma machining

Baolu Shi; Xuhui Xie; Yifan Dai; Chunde Liao

doi:10.1117/12.2069012

6 August 2014 A high efficiency machining method of SiC: ion-enhanced atmospheric pressure plasma machining

Baolu Shi, Xuhui Xie, Yifan Dai, Chunde Liao

Proceedings Volume 9281, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 928104 (2014) https://doi.org/10.1117/12.2069012
Event: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2014), 2014, Harbin, China

Abstract

An ion-enhanced atmospheric pressure plasma machining (IAPPM) method is introduced to improve the processing efficiency of SiC. The argon inductively coupled plasma is generated in designed the IAPPM machine. SF₆ chosen as the reactive gas is injected into the argon plasma where SF₆ is broken down into fluorine radicals. The reactive atoms are delivered onto the surface of SiC, and SiF₄ is generated which is exhausted in the gaseous form. The material removal rate is increased by bringing in the energetic ions bombardment. Three linear trenches were etched onto the S-SiC sample. The etch rate is 3μm/min. The surface becomes rough after the IAPPM process.

Citation Download Citation

Baolu Shi, Xuhui Xie, Yifan Dai, and Chunde Liao "A high efficiency machining method of SiC: ion-enhanced atmospheric pressure plasma machining", Proc. SPIE 9281, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 928104 (6 August 2014); https://doi.org/10.1117/12.2069012

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