Sulfurizing method for passivation used in InAs/GaSb type-II superlattice photodetectors

Hongyue Hao; Wei Xiang; Guowei Wang; Dongwei Jiang; Yingqiang Xu; Zhengwei Ren; Zhenhong He; Zhichuan Niu

doi:10.1117/12.2072179

20 November 2014 Sulfurizing method for passivation used in InAs/GaSb type-II superlattice photodetectors

Hongyue Hao, Wei Xiang, Guowei Wang, Dongwei Jiang, Yingqiang Xu, Zhengwei Ren, Zhenhong He, Zhichuan Niu

Proceedings Volume 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications; 93001K (2014) https://doi.org/10.1117/12.2072179
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China

Abstract

Since InAs/GaSb type-II superlattices (T2SL) were first proposed as infrared (IR) sensing materials, T2SL mid-wave IR (MWIR) and long-wave IR (LWIR) are of great importance for a variety of civil and military applications. A very important parameter of IR photodetectors is dark current, which affects the detectivity directly. Chemical and physical passivation has revealed to be an efficient technique to reduce surface component of dark current, which will become a dominant current in focal plane arrays (FPA). In this paper we talk about the electrochemistry and dielectric method for passivation. We choose anodic sulfide and SiO₂ passivation. The leakage current as a function of bias voltage (I–V) results show dark current of anodic sulfide device was two orders of magnitude lower than unpassivation one, but reactive magnetron sputtering SiO₂ didn’t perform well. The highest R₀A we get from the sulfurizing experiment is 657Ω·cm²in 77K. After fabrication the measured cutoff wavelength is 5.0μm. Finally blackbody test result shows that the peak quantum efficiency (QE) at 3.33μm is 68% and the peak detectivity is 7.16x10¹¹cm·Hz^1/2/W.

Citation Download Citation

Hongyue Hao, Wei Xiang, Guowei Wang, Dongwei Jiang, Yingqiang Xu, Zhengwei Ren, Zhenhong He, and Zhichuan Niu "Sulfurizing method for passivation used in InAs/GaSb type-II superlattice photodetectors", Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93001K (20 November 2014); https://doi.org/10.1117/12.2072179

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