Very long-wavelength (~20μm) InAs/GaSb superlattice infrared detector with double InSb-like interfaces

Dongwei Jiang; Fengyun Guo; Wei Xiang; Yuehong Hao; Guowei Wang; Yingqiang Xu; Qingjiang Yu; Zhichuan Niu; Liancheng Zhao

doi:10.1117/12.2072187

20 November 2014 Very long-wavelength (~20μm) InAs/GaSb superlattice infrared detector with double InSb-like interfaces

Dongwei Jiang, Fengyun Guo, Wei Xiang, Yuehong Hao, Guowei Wang, Yingqiang Xu, Qingjiang Yu, Zhichuan Niu, Liancheng Zhao

Author Affiliations +

Proceedings Volume 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications; 93001L (2014) https://doi.org/10.1117/12.2072187
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China

Abstract

Optimization of growth parameters for type-II 17MLs InAs/8MLs GaSb strained layer superlattices (SLS) (λ_cut-off~20 μm at 77K), grown on GaSb substrates by solid source molecular beam epitaxy (MBE), has been undertaken. Both the GaSb on InAs interface and the InAs on GaSb interface were inserted with InSb interfaces using migration enhanced epitaxy (MEE) method to balance the lattice mismatch. The influence of the effect of the thickness of InSb layer on the properties of the superlattice has been investigated. We demonstrate the structural properties of these SLS structures, using high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and high-resolution transmission electron microscopy (TEM). Optimized growth parameters were then used to grow SLS detectors with the active region of 2-μm-thick, which demonstrated full-width half-maximum (FWHM) of 22 arcsec for the first SLS satellite peak and nearly zero lattice mismatch between zero-order SLS peak and GaSb substrate. The cut-off wavelength of the detector is 20 μm at 77K measured by Fourier Transform Infrared (FTIR) spectrometer with the quantum efficiency of 10% and the Johnson noise limited detectivity reached 2.8×10¹⁰cm Hz^1/2/W at 10.55μm under -75mV bias voltage.

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Dongwei Jiang, Fengyun Guo, Wei Xiang, Yuehong Hao, Guowei Wang, Yingqiang Xu, Qingjiang Yu, Zhichuan Niu, and Liancheng Zhao "Very long-wavelength (~20μm) InAs/GaSb superlattice infrared detector with double InSb-like interfaces", Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93001L (20 November 2014); https://doi.org/10.1117/12.2072187

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