Fracture analysis of InSb focal plane arrays chip under thermal shock

Dongfeng Geng; Kelin Zheng; Yingjie He

doi:10.1117/12.2073417

20 November 2014 Fracture analysis of InSb focal plane arrays chip under thermal shock

Dongfeng Geng, Kelin Zheng, Yingjie He

Proceedings Volume 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications; 93002I (2014) https://doi.org/10.1117/12.2073417
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China

Abstract

In the hybrid InSb focal plane arrays(FPAs) chip fabrication process, the fracture of chips under thermal shock is the main factor of InSb FPA chip failure and the yield of InSb FPAs chip has been limited by the high fracture probability. In this paper, a novel equipment for thermal shock experiment has been designed. Using this equipment, the thermal shock experiment on InSb FPAs was carried out and the position and distribution of cracks in InSb FPAs chip was obtained. It was found that thermal mismatch stress and process damage are two main causes responsible for InSb FPAs chip’s fracture by analyzing crack and process factors. By selecting suitable underfill materials, optimizing the curing process, controlling the feed rate of wafer cutting,reducing thermal mismatch stress and avoiding the process damage induced in process, the cracking probability of InSb FPAs chip has been decreased.Thus, the yield of InSb FPAs chip was increased significantly.

Citation Download Citation

Dongfeng Geng, Kelin Zheng, and Yingjie He "Fracture analysis of InSb focal plane arrays chip under thermal shock", Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93002I (20 November 2014); https://doi.org/10.1117/12.2073417

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