Study of Dill's B parameter measurement of EUV resist

Atsushi Sekiguchi; Yoko Matsumoto; Tetsuo Harada; Takeo Watanabe; Hiroo Kinoshita

doi:10.1117/12.2082883

13 March 2015 Study of Dill's B parameter measurement of EUV resist

Atsushi Sekiguchi, Yoko Matsumoto, Tetsuo Harada, Takeo Watanabe, Hiroo Kinoshita

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 94222L (2015) https://doi.org/10.1117/12.2082883
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

Our group previously explored methods for measuring simulation parameter for advanced chemically amplified (CA) resists, including development parameters ^[1]. Dill’s C parameter ^[2-3] , acid diffusion length generated from PAG^[4], and de-protection reaction parameters ^[5-6]. We performed simulations of EUV resists using these parameters, the results of which allowed us to examine the conditions for reducing LER and improving resolution. This paper discusses a method for measuring the Dill’s B parameter, which had been difficult to measure with conventional methods. We also confirmed that enhancing the resist polymer’s EUV light absorption is effective in improving the sensitivity of the CA resist.

Citation Download Citation

Atsushi Sekiguchi, Yoko Matsumoto, Tetsuo Harada, Takeo Watanabe, and Hiroo Kinoshita "Study of Dill's B parameter measurement of EUV resist", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94222L (13 March 2015); https://doi.org/10.1117/12.2082883

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