Defects And Interfaces In Zone Melt Recrystallized Silicon

A. R. Srivatsa; J. Narayan; P. M. Zavacky

doi:10.1117/12.947403

16 August 1988 Defects And Interfaces In Zone Melt Recrystallized Silicon

A. R. Srivatsa, J. Narayan, P. M. Zavacky

Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947403
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

We have studied defects and interfaces in ZMR silicon using transmission electron microscopy. Both plan view and cross sectional samples were examined and the silicon/oxide interfaces were studied at high magnification. The substrate/oxide interface exhibited a roughness of the order of a monolayer while the oxide/overlayer interface was slightly rougher with a roughness of the order of two to three monolayers. Subboundaries were not observed in the silicon overlayer. Dislocations were the dominant type of defects in the overlayer and dislocation reactions of the type a/2[101] (111) + a/2[011] (111) = a/2[110] (001) were frequently observed. The mechanism of formation of these nodes during the ZMR process is discussed.

Citation Download Citation

A. R. Srivatsa, J. Narayan, and P. M. Zavacky "Defects And Interfaces In Zone Melt Recrystallized Silicon", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); https://doi.org/10.1117/12.947403

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