Two-dimensional materials for low power and high frequency devices

Brian M. Bersch; Yu-Chuan Lin; Kehao Zhang; Sarah M. Eichfeld; Jacob H. Leach; Robert Metzger; Keith Evans; Joshua A. Robinson

doi:10.1117/12.2177986

22 May 2015 Two-dimensional materials for low power and high frequency devices

Brian M. Bersch, Yu-Chuan Lin, Kehao Zhang, Sarah M. Eichfeld, Jacob H. Leach, Robert Metzger, Keith Evans, Joshua A. Robinson

Author Affiliations +

Proceedings Volume 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII; 94670T (2015) https://doi.org/10.1117/12.2177986
Event: SPIE Defense + Security, 2015, Baltimore, MD, United States

Abstract

In this paper, we present an overview of the current state-of-the-art in two-dimensional materials beyond graphene, and summarize device performance reported to-date. There is promise for these layered materials to be the foundation of a new area in low power and high frequency electronics, with early reports indicating 10s of gigahertz (GHz) operation without significant optimization of parasitic resistances or capacitances. In addition, we discuss the synthesis of transition metal dichalcogenides and the integration of as-grown material into heterostructures and electronic devices. Finally, we discuss the impact of surface preparation on the integration of dielectrics with MoS₂ required to achieve GHz performance.

Citation Download Citation

Brian M. Bersch, Yu-Chuan Lin, Kehao Zhang, Sarah M. Eichfeld, Jacob H. Leach, Robert Metzger, Keith Evans, and Joshua A. Robinson "Two-dimensional materials for low power and high frequency devices", Proc. SPIE 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII, 94670T (22 May 2015); https://doi.org/10.1117/12.2177986

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