Theoretical investigations of optical properties of Ga(In)AsBi quantum well systems using 8-band and 14-band models

M. Gladysiewicz; I. Ivashev; M. S. Wartak

doi:10.1117/12.2208366

4 March 2016 Theoretical investigations of optical properties of Ga(In)AsBi quantum well systems using 8-band and 14-band models

M. Gladysiewicz, I. Ivashev, M. S. Wartak

Author Affiliations +

Proceedings Volume 9742, Physics and Simulation of Optoelectronic Devices XXIV; 974218 (2016) https://doi.org/10.1117/12.2208366
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

We report on possible consequences of alloying of GaAs with GaBi or InBi on band structure and material gain of quantum wells. Typical considered structure consists of 8nm wide GaAsBi quantum well on GaAs substrate. Our analysis is performed using 8-band and 14-band kp models. The obtained results indicate that for GaInAsBi/InP quantum well with 5% of Bi it might be possible to achieve emission wavelengths around 4 μm .

Citation Download Citation

M. Gladysiewicz, I. Ivashev, and M. S. Wartak "Theoretical investigations of optical properties of Ga(In)AsBi quantum well systems using 8-band and 14-band models", Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 974218 (4 March 2016); https://doi.org/10.1117/12.2208366

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