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This paper focuses on latest progress in experimental and theoretical studies on silicon-based carrier-depletion PNjunction phase shifters in terms of high modulation efficiency for energy-efficient photonic networks of high transmission capacity. Modulation efficiency of rib-waveguide phase shifters having various PN-junction configuration are characterized with respect to DC figure of merit defined for phase shifters using carrier-plasma dispersion as the physical principle of refractive-index modulation. In addition, RF drive voltage required for 10-Gb/s on-off keying is characterized for rib-waveguide phase shifters including lateral and vertical PN-junction configurations.
Kensuke Ogawa,Kazuhiro Goi,Norihiro Ishikura,Hiroki Ishihara,Shinichi Sakamoto,Tsung-Yang Liow,Xiaoguang Tu,Guo-Qiang Lo,Dim-Lee Kwong,Soon Thor Lim,Min Jie Sun, andChing Eng Png
"Silicon-based phase shifters for high figure of merit in optical modulation", Proc. SPIE 9752, Silicon Photonics XI, 975202 (14 March 2016); https://doi.org/10.1117/12.2218184
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