Scanning near-field optical microscopy of AlGaN epitaxial layers

S. Marcinkevičius; R. Jain; M. Shatalov; R. Gaska; M. Shur

doi:10.1117/12.2236999

15 September 2016 Scanning near-field optical microscopy of AlGaN epitaxial layers

S. Marcinkevičius, R. Jain, M. Shatalov, R. Gaska, M. Shur

Author Affiliations +

Proceedings Volume 9926, UV and Higher Energy Photonics: From Materials to Applications; 992605 (2016) https://doi.org/10.1117/12.2236999
Event: SPIE Nanoscience + Engineering, 2016, San Diego, California, United States

Abstract

Scanning near-field PL spectroscopy was applied to study spatial variations of the emission spectra of AlGaN epilayers with AlN molar fractions between 0.3 and 0.7. Experiments were performed at 300 K with 100 nm spatial resolution. In general, photoluminescence spectra were found to be highly uniform with the peak energy deviation of 2 to 6 meV for different alloy compositions. In the 30% and 42% Al layers, a slightly lower Al content and a higher point defect concentration at the boundaries of growth domains were detected. These features were attributed to the higher mobility of Ga adatoms during growth. The inhomogeneous broadening beyond the random alloy distribution was found negligible for the 30% and 42% Al samples, and about 40–50 meV for the layers with a larger Al content.

Conference Presentation

Citation Download Citation

S. Marcinkevičius, R. Jain, M. Shatalov, R. Gaska, and M. Shur "Scanning near-field optical microscopy of AlGaN epitaxial layers", Proc. SPIE 9926, UV and Higher Energy Photonics: From Materials to Applications, 992605 (15 September 2016); https://doi.org/10.1117/12.2236999

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