Vanadium dioxide (VO2) is a polycrystalline thin film that reversibly changes from a semiconductor to a metallic state at 68°C, and has important applications in thermal detection and actuation as well as in reconfigurable photonic circuitry. In this work, we have produced VO2 thin films by oxygen ion-assisted electron-beam evaporation. Compared to prior work, the phase change temperature is as low as 54°C, which we believe arise due to the oxygen implantation from the ion-assisted process. The films were deposited on c-cut sapphire substrates, and their properties were measured using a four-point probe electrical sheet resistance measurement.
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