Geometry And Surface Effects On III-V MSM Diodes For High-Speed Optoelectronic Impedance Switches

Sankar Ray; Robert B. Darling

doi:10.1117/12.960122

9 February 1989 Geometry And Surface Effects On III-V MSM Diodes For High-Speed Optoelectronic Impedance Switches

Sankar Ray, Robert B. Darling

Proceedings Volume 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II; (1989) https://doi.org/10.1117/12.960122
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

Metal semiconductor metal (MSM) photoconductive switches were fabricated on GaAs substrates to study the on-resistance (Ron) at a low bias of 0.5 V, and low input optical power of 1mW. A simple dc model was developed which explained the observed dependence of Ron on geometry and surface condition of the device.

Citation Download Citation

Sankar Ray and Robert B. Darling "Geometry And Surface Effects On III-V MSM Diodes For High-Speed Optoelectronic Impedance Switches", Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); https://doi.org/10.1117/12.960122

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