Plasma shock waves excited by THz radiation

S. Rudin; G. Rupper; M. Shur

doi:10.1117/12.2241984

21 October 2016 Plasma shock waves excited by THz radiation

S. Rudin, G. Rupper, M. Shur

Author Affiliations +

Proceedings Volume 9993, Millimetre Wave and Terahertz Sensors and Technology IX; 99930D (2016) https://doi.org/10.1117/12.2241984
Event: SPIE Security + Defence, 2016, Edinburgh, United Kingdom

Abstract

The shock plasma waves in Si MOS, InGaAs and GaN HEMTs are launched at a relatively small THz power that is nearly independent of the THz input frequency for short channel (22 nm) devices and increases with frequency for longer (100 nm to 1 mm devices). Increasing the gate-to-channel separation leads to a gradual transition of the nonlinear waves from the shock waves to solitons. The mathematics of this transition is described by the Korteweg-de Vries equation that has the single propagating soliton solution.

Conference Presentation

Citation Download Citation

S. Rudin, G. Rupper, and M. Shur "Plasma shock waves excited by THz radiation", Proc. SPIE 9993, Millimetre Wave and Terahertz Sensors and Technology IX, 99930D (21 October 2016); https://doi.org/10.1117/12.2241984

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE