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1 April 2022 Development of novel ternary GaAsP material for nonlinear optical applications
Shivashankar Vangala, Vladimir Tassev, Duane Brinegar
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Proceedings Volume PC11985, Nonlinear Frequency Generation and Conversion: Materials and Devices XXI; PC119850Q (2022) https://doi.org/10.1117/12.2610122
Event: SPIE LASE, 2022, San Francisco, California, United States
Abstract
Thick growth of a ternary nonlinear optical material GaAsxP1-x by HVPE is accomplished to demonstrate nonlinear frequency conversion in the mid and longwave infrared. The nonlinear optical properties of the ternary material are ideal compared to those of widely explored QPM materials – GaAs and GaP – for frequency conversion. Here, we present the HVPE growth results of 500 µm or thicker GaAsxP1-x ternary layers with different arsenic composition. A full suite of optical characterization of GaAsP layers grown on both plain substrates and on orientation patterned templates is presented to demonstrate the suitability of this novel optical material for frequency conversion.
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Shivashankar Vangala, Vladimir Tassev, and Duane Brinegar "Development of novel ternary GaAsP material for nonlinear optical applications", Proc. SPIE PC11985, Nonlinear Frequency Generation and Conversion: Materials and Devices XXI, PC119850Q (1 April 2022); https://doi.org/10.1117/12.2610122
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KEYWORDS
Gallium arsenide
Arsenic
Binary data
Frequency conversion
Nonlinear frequency conversion
Luminescence
Mid-IR
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