Here we present our latest PIC-integrated TMD-based slot-enhanced photodetector. The
metallic slot enhances the light-matter-interaction and hence absorption into the semiconductor TMD layer.
Unlike Graphene detectors, this device based on a 1+eV wide Eg detector (MoTe2) shows a low dark-current
Of 100’s pA (i.e. 3 orders of magnitude lower than graphene). Utilizing the plasmonic slot allows to harness
scaling effects known from FETs, and reduce carrier transit times. Thus, we demonstrate 10GHz roll-offs
despite a rather low mobility. We further show that the short-channel allows for near-ballistic transport, and
more importantly high gain-bandwidth-products (GPB), which scales with the source-drain distance squared.
The combination of a TMD semiconductor with a slot for short transit times, enables we new class of
efficient yet compact PIC-integrated detectors offering high GBP.
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