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5 March 2022 Mid-IR silicon photonics DBR laser with hybrid integrated GaSb gain element for sensing applications
Jukka Viheriälä, Nouman Zia, Heidi Tuorila, Samu-Pekka Ojanen, Eero Koivusalo, Joonas Hilska, Mircea Guina
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Proceedings Volume PC12006, Silicon Photonics XVII; PC1200606 (2022) https://doi.org/10.1117/12.2609472
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
Development of integrated photonics enables unprecedented scaling of optical systems with small and cost-effective architectures, which is instrumental for the penetration of photonics solutions to a vast variety of new applications. To this end, mid-IR integrated photonics is emerging as a key technology for advanced sensing applications. We demonstrate the first DBR lasers exploiting on-chip integration of GaSb gain elements and silicon photonics circuit for wavelength conditioning. The hybrid integrated DBR laser delivers a maximum power of 6.0mW in CW mode at room temperature, with a narrow spectrum around 2µm. The integration scheme enables wavelength scaling beyond 3 µm.
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Jukka Viheriälä, Nouman Zia, Heidi Tuorila, Samu-Pekka Ojanen, Eero Koivusalo, Joonas Hilska, and Mircea Guina "Mid-IR silicon photonics DBR laser with hybrid integrated GaSb gain element for sensing applications", Proc. SPIE PC12006, Silicon Photonics XVII, PC1200606 (5 March 2022); https://doi.org/10.1117/12.2609472
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KEYWORDS
Mid-IR
Chemical elements
Gallium antimonide
Silicon photonics
Laser applications
Waveguides
Integrated photonics
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